Wednesday, July 6, 2011

IBM Making Memory Faster than Flash

IBM Thursday announced a new breakthrough in computer memorytechnology, where the development of solid-state chip that can store as much data as NAND flash technology but with the ability of100-fold and life is much longer.

Currently, NAND flash memory products, such as SSD, has been able to write data to achieve 2Gbit/sec.

IBM says they have produced a phase change memory (PCM)chips that can store two bits of data per cell without any corruptdata problem, something that has plagued the initial developmentof PCM.

As NAND flash memory, used in solid state drives (SSDs) andembedded in a computer like the Apple MacBook Air, PCMnonvolatile - meaning it retains data after power supply is turned off.

Pozidis said that during the last five months, a team of IBM scientists have tested the multi-level cell (MLC) chip capable ofstoring two and finally three bits of data, showing that he can reach the level of reliability suitable for practical applications.

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